maboudianlab - Jingchun Zhang

Alumnus - Ph. D.

Ph.D. in Chemical Engineering, University of California, Berkeley, 2007

M.S. in Material Science, Tsinghua University, China, 2002

B.S. in Polymer Material & Chemical Engineering, Tsinghua University, China, 2000

Current Position:

Applied Materials

Silicon carbide and diamond materials development for micro- and nano-electromechanical systems

Silicon carbide is well known as an attractive material for MEMS applications at high temperatures and in harsh environments. Our group has developed a single-precursor low-pressure chemical vapor deposition (LPCVD) process to grow conformal poly-SiC films on different substrates at deposition temperatures from 650°C to 850°C.

To further extend our understanding and application of the SiC films grown by our single-precursor low pressure process, I am conducting research on following fields:

1. Electrical characterization of SiC.
2. P-type doping of SiC during film growth in the LPCVD reactor.
3. Metalization of SiC film and metal/SiC contact/interface properties characterization.

Ph.D. Thesis

Silicon carbide and diamond materials development for micro- and nano-electromechanical systems (2007)

Advisors: Prof.'s Roya Maboudian and Roger T. Howe.