maboudianlab - Wei-Cheng Lien

Ph. D. - 2nd year

B.S., Chemical Engineering, National Tsing-Hua University, TAIWAN (2005)

Office Location: B78 Tan Hall
Office Telephone: 643-3489
Office Fax: 643-1228

Research:

Silicon Carbide (SiC) is an appealing material for harsh environment MEMS and electronics application. I am pursuing two new precursors, methylsilane and methyltrichlorosilane, for chemical vapor deposition of SiC. This research will aim to develop the process parameters to obtain high quality polycrystalline and epitaxial 3C-SiC films with reasonable growth rates, high uniformity, controlled residual stress, controlled strain gradient, and controlled resistivity.

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